tm 4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler may 2007 ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler features high sensitivity to low input drive current meets or exceeds all jedec registered speci?ations ul, c-ul approved vde 0884 approval available as a test option ?add option v (e.g., 4n29vm) applications low power logic circuits t elecommunications equipment po r table electronics solid state relays interfacing coupling systems of different potentials and impedances description the 4n29m, 4n30m, 4n32m, 4N33M, h11b1m and til113m have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. pa ck ag es schematic emitter collector 1 2 3 anode cathode 4 5 6 base n/c 6 1 6 6 1 1
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 2 absolute maximum ratings (t a = 25? unless otherwise speci?d.) symbol parameter value units tot al device t stg storage temperature -40 to +150 ? t opr operating temperature -40 to +100 ? t sol lead solder temperature (wave) 260 for 10 sec ? p d t otal device power dissipation @ t a = 25? 250 mw derate above 25? 3.3 mw/? emitter i f continuous forward current 80 ma v r reverse voltage 3 v i f (pk) forward current ?peak (300?, 2% duty cycle) 3.0 a p d led power dissipation @ t a = 25? 150 mw derate above 25? 2.0 mw/? detector bv ceo collector-emitter breakdown voltage 30 v bv cbo collector-base breakdown voltage 30 v bv eco emitter-collector breakdown voltage 5 v p d detector power dissipation @ t a = 25? 150 mw derate above 25? 2.0 mw/? i c continuous collector current 150 ma
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 3 electrical characteristics (t a = 25? unless otherwise speci?d.) individual component characteristics t ransfer characteristics symbol parameter test conditions device min. typ. max. unit emitter v f input forward voltage* i f = 10ma 4nxxm 1.2 1.5 v h11b1m, til113m 0.8 1.2 1.5 i r reverse leakage current* v r = 3.0v 4nxxm 0.001 100 ? v r = 6.0v h11b1m, til113m 0.001 10 c capacitance* v f = 0v, f = 1.0mhz all 150 pf detector bv ceo collector-emitter breakdown voltage* i c = 1.0ma, i b = 0 4nxxm, til113m 30 60 v h11b1m 25 60 bv cbo collector-base breakdown voltage* i c = 100?, i e = 0 all 30 100 v bv eco emitter-collector breakdown voltage* i e = 100?, i b = 0 4nxxm 5.0 10 v h11b1m, til113m 710 i ceo collector-emitter dark current* v ce = 10v, base open all 1 100 na symbol parameter test conditions device min. typ. max. unit dc characteristics i c(ctr) collector output current* (1, 2) i f = 10ma, v ce = 10v, i b = 0 4n32m, 4N33M 50 (500) ma (%) 4n29m, 4n30m 10 (100) i f = 1ma, v ce = 5v h11b1m 5 (500) i f = 10ma, v ce = 1v til113m 30 (300) v ce(sat) saturation voltage* (2) i f = 8ma, i c = 2.0ma 4nxxm 1.0 v til113m 1.25 i f = 1ma, i c = 1ma h11b1m 1.0 ac characteristics t on tu r n-on time i f = 200ma, i c = 50ma, v cc = 10v, r l = 100 ? 4nxxm, til113m 5.0 ? i f = 10ma, v ce = 10v, r l = 100 ? h11b1m 25 t off tu r n-off time i f = 200ma, i c = 50ma, v cc = 10v, r l = 100 ? 4n32m, 4N33M, til113m 100 ? 4n29m, 4n30m 40 i f = 10ma, v ce = 10v, r l = 100 ? h11b1m 18 bw bandwidth (3, 4) 30 khz
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 4 electrical characteristics (t a = 25? unless otherwise speci?d.) (continued) isolation characteristics notes: * indicates jedec registered data. 1. the current transfer ratio(i c /i f ) is the ratio of the detector collector current to the led input current. 2. pulse test: pulse width = 300?, duty cycle 2.0% . 3. i f adjusted to i c = 2.0ma and i c = 0.7ma rms. 4. the frequency at which i c is 3db down from the 1khz value. 5. for this test, led pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common. symbol characteristic test conditions device min. typ. max. units v iso input-output isolation voltage (5) i i-o 1?, vrms, t = 1sec. all 7500 vac(peak) vdc 4n32m* 2500 v vdc 4N33M* 1500 r iso isolation resistance (5) v i-o = 500vdc all 10 11 ? c iso isolation capacitance (5) v i-o = , f = 1mhz all 0.8 pf
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 5 t ypical performance curves fig. 2 normalized ctr vs. forward current i f - forward current (ma) 02468101214161820 normalized ctr 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce = 5.0v t a = 25 c normalized to i f = 10 ma fig. 3 normalized ctr vs. ambient temperature t a - ambient temperature ( c) -60 -40 -20 0 20 40 60 80 100 normalized ctr 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i f = 5 ma i f = 10 ma i f = 20 ma normalized to i f = 10 ma t a = 25 c i f - led forward current (ma) v f - forward voltage (v) fig. 1 led forward voltage vs. forward current 110 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = 25 c t a = -55 c t a = 100 c fig. 5 ctr vs. rbe (saturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i f = 20 ma i f = 10 ma i f = 5 ma v ce = 0.3 v fig. 4 ctr vs. rbe (unsaturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 5.0 v i f = 20 ma i f = 10 ma i f = 5 ma 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 i f = 5 ma i f = 20 ma i f = 10 ma fig. 6 collector-emitter saturation voltage vs. collector current i c - collector current (ma) v ce (sat) - collector-emitter saturation voltage (v) i f = 2.5 ma t a = 25 ?c
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 6 t ypical performance curves (continued) normalized t on - (t on(r be ) / t on(open) ) fig. 8 normalized t on vs. r be r be - base resistance (k ?) 10 100 1000 10000 100000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v cc = 10 v i c = 2 ma r l = 100 ? switching speed - ( s) fig. 7 switching speed vs. load resistor r-load resistor (k ?) 0.1 1 10 100 0.1 1 10 100 1000 t off i f = 10 ma v cc = 10 v t a = 25 c t r t on t f 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v cc = 10 v i c = 2 ma r l = 100 ? normalized t off - (t off(r be ) / t off(open) ) 10 100 1000 10000 100000 r be - base resistance (k ?) fig. 9 normalized t off vs. r be fig. 10 dark current vs. ambient temperature t a - ambient temperature ( c) 020406 080 100 i ceo - collector -emitter dark current (na) 0.001 0.01 0.1 1 10 100 1000 10000 v ce = 10 v t a = 25 c output pulse input pulse test circuit wave forms t r t f input i f r l r be v cc = 10v output t on 10% 90% t off figure 11. switching time test circuit and waveforms i c adjust i f to produce i c = 2 ma
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 7 pa ck ag e dimensions note: all dimensions are in inches (millimeters). through hole 0.4" lead spacing surface mount recommended pay layout for surface mount leadform 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30) pin 1 id seating plane 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.006 (0.16) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] pin 1 id seating plane 0.350 (8.89) pin 1 id 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) seating plane 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 ( 1.78 ) 0.060 ( 1.52 ) 0.030 ( 0.76 ) 0.100 ( 2.54 ) 0.295 ( 7.49 ) 0.415 ( 10.54 )
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 8 ordering information marking information suf? example option no suf? 4n32m standard through hole device s 4n32sm surface mount lead bend sr2 4n32sr2m surface mount; tape and reel t 4n32tm 0.4" lead spacing v 4n32vm vde 0884 tv 4n32tvm vde 0884, 0.4" lead spacing sv 4n32svm vde 0884, surface mount sr2v 4n32sr2vm vde 0884, surface mount, tape & reel 4n29 v x yy q 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 9 t ape dimensions note: all dimensions are in millimeters. re?w soldering pro?e 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
4n29m, 4n30m, 4n32m, 4N33M, h11b1m, til113m general purpose 6-pin photodarlington optocoupler ?2007 fairchild semiconductor corporation www.fairchildsemi.com 4nxxm, h11b1m, til113m rev. 1.0.0 10 tradem arks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex across the board. around the world. activearray bottomless build it now coolfet coreplus crossvolt ctl current transfer logic dome e 2 cmos ecospark ensigna fact quiet series fact fast fastr fps frfet globaloptoisolator gto hisec i-lo implieddisconnect intellimax isoplanar microcoupler micropak microwire motion-spm msx msxpro ocx ocxpro optologic optoplanar pacman pdp-spm pop power220 power247 poweredge powersaver power-spm powertrench programmable active droop qfet qs qt optoelectronics quiet series rapidconfigure rapidconnect scalarpump smart start spm stealth superfet supersot -3 supersot -6 supersot -8 syncfet tcm the power franchise tinyboost tinybuck tinylogic tinyopto tinypower tinywire trutranslation serdes uhc unifet vcx wire disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild? worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild? products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems wh ich, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary this datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed first production full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i27
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